Continuum versus Quasi-Bound State Tunneling in Novel Device Architectures
نویسندگان
چکیده
In contrast to bulk MOSFETs, in UTB devices using SOI substrates, also the geometrical confinement yields quantization. This strongly affects the local density of states, and gives rise to quasi-bound states (QBS), hence the assumption of a continuum of states is no longer valid. Each QBS gives rise to a tunneling current which follows from the number of electrons occupying the state over the corresponding lifetimes (see Fig. 2). Following [4], a summation over all contributing valleys and states gives the total leakage current by JQBS = kBTq πh̄ ∑
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